BASIC ANALOG AND DIGITAL
CONTENTS 1 BASIC DIODE CIRCUITS LEARNING OBJECTIVES IDEAL AND PRACTICAL DIODES IDEAL DIODE IDEAL SI PN JUNCTION DIODE PRACTICAL DIODES INCREMENTAL DIODE RESISTANCE BASIC ANALYSIS OF DIODE CIRCUITS PIECEWISE LINEAR APPROXIMATION BIAS POINT SMALL-SIGNAL MODEL RECTI?ER CIRCUITS HALF-WAVE RECTI?ER FULL-WAVE RECTI?ER SMOOTHING OF OUTPUT CAPACITOR-INPUT FILTER APPROXIMATE ANALYSIS OF CAPACITOR-INPUT FILTER ZENER VOLTAGE REGULATOR VOLTAGE–CURRENT CHARACTERISTIC ANALYSIS OF ZENER REGULATOR LOAD REGULATION AND LINE REGULATION DIODE VOLTAGE LIMITERS SURGE PROTECTION DIODE-CAPACITOR CIRCUITS DC RESTORER VOLTAGE MULTIPLICATION SUMMARY OF MAIN CONCEPTS AND RESULTS LEARNING OUTCOMES SUPPLEMENTARY EXAMPLES AND TOPICS ON WEBSITE PROBLEMS AND EXERCISES 2 BASIC PRINCIPLES OF SEMICONDUCTORS EXCERPTS FROM WAVE MECHANICS SOME BASIC IDEAS SCHRÖDINGER’S EQUATION WAVE PACKETS FREE ATOMS ENERGY BAND STRUCTURE ELECTRIC CONDUCTION IN SEMICONDUCTORS ELECTRONS IN A PERIODIC POTENTIAL EFFECTIVE MASS HOLE CONDUCTION DENSITY OF ELECTRON STATES FERMI–DIRAC DISTRIBUTION INTRINSIC AND EXTRINSIC SEMICONDUCTORS CRYSTAL STRUCTURE INTRINSIC SEMICONDUCTOR EXTRINSIC SEMICONDUCTORS ELECTROCHEMICAL POTENTIAL EXPRESSION FOR CHEMICAL POTENTIAL EXPRESSION FOR ELECTROCHEMICAL POTENTIAL GENERALIZED OHM’S LAW STATE OF EQUILIBRIUM FERMI LEVEL AND ELECTROCHEMICAL POTENTIAL CARRIER CONCENTRATIONS IN SEMICONDUCTORS CARRIER GENERATION AND RECOMBINATION POSITION OF FERMI LEVEL N-TYPE SEMICONDUCTOR P-TYPE SEMICONDUCTOR CARRIER MOBILITY VARIATION WITH DOPANT CONCENTRATION VARIATION WITH TEMPERATURE CARRIER RECOMBINATION MINORITY CARRIER LIFETIME 3 PN JUNCTION AND SEMICONDUCTOR DIODES THE PN JUNCTION AT EQUILIBRIUM JUNCTION POTENTIAL DEPLETION APPROXIMATION THE BIASED PN JUNCTION THE PN JUNCTION AS A RECTI?ER WIDTH OF DEPLETION REGION CHARGE DISTRIBUTIONS AND CURRENTS UNDER BIAS CURRENT–VOLTAGE RELATION CHARGE–CURRENT RELATION PN JUNCTION CAPACITANCES TEMPERATURE EFFECTS JUNCTION BREAKDOWN SEMICONDUCTOR PHOTOELECTRIC DEVICES PHOTOCONDUCTIVE CELL PHOTODIODE PHOTOCELL LIGHT-EMITTING DIODES TUNNEL DIODE CONTACTS BETWEEN DISSIMILAR MATERIALS METAL–METAL CONTACTS METAL–SEMICONDUCTOR CONTACTS SCHOTTKY DIODE HETEROJUNCTION 4 SEMICONDUCTOR FABRICATION PREPARATION OF SILICON WAFER HIGH-PURITY SILICON CRYSTAL GROWTH WAFER PRODUCTION OXIDATION PATTERNING PROCESSES PREPARATION OF MASKS LITHOGRAPHY ETCHING DEPOSITION PROCESSES ION IMPLANTATION DIFFUSION CHEMICAL VAPOR DEPOSITION METALLIZATION CLEAN ROOM ENVIRONMENT PACKAGING PACKAGE TYPES FABRICATION OF SIMPLE DEVICES RESISTORS PN JUNCTION DIODES CAPACITORS CMOS FABRICATION TRANSISTOR ISOLATION TRANSISTOR FORMATION SILICON-ON-INSULATOR TECHNOLOGY FABRICATION OF BIPOLAR JUNCTION TRANSISTORS BASIC BJT STRUCTURE MODI?ED BJT STRUCTURES BICMOS MISCELLANEOUS TOPICS SIGE TECHNOLOGY CRYSTAL DEFECTS SI–SIO2 INTERFACE 5 FIELD-EFFECT TRANSISTORS AMPLI?ERS HYPOTHETICAL AMPLIFYING DEVICE BASIC OPERATION OF THE MOSFET STRUCTURE OPERATION OF ENHANCEMENT-TYPE MOSFETS CURRENT–VOLTAGE RELATIONS P-CHANNEL MOS TRANSISTOR SMALL-SIGNAL OPERATION SECONDARY EFFECTS IN MOSFETS CHANNEL-LENGTH MODULATION TRANSCONDUCTANCE OVERDRIVE VOLTAGE BREAKDOWN BODY EFFECT CAPACITANCES UNITY-GAIN BANDWIDTH SHORT-CHANNEL EFFECTS CARRIER VELOCITY SATURATION AND HOT CARRIERS REDUCED OUTPUT RESISTANCE AND THRESHOLD OTHER EFFECTS IMPROVED PERFORMANCE DEPLETION-TYPE MOSFETS DIODE CONNECTION COMPLEMENTARY MOSFETS CMOS AMPLI?ER CMOS TRANSMISSION GATE CMOS INVERTER JUNCTION FIELD-EFFECT TRANSISTOR OPERATION METAL–SEMICONDUCTOR FIELD-EFFECT TRANSISTOR HIGH-MOBILITY DEVICES SUPPLEMENTARY EXAMPLES AND TOPICS ON CD 6 BIPOLAR JUNCTION TRANSISTOR BASIC OPERATION OF THE BJT COMMON-BASE DC CURRENT GAINS TYPICAL STRUCTURE COMMON-EMITTER CON?GURATION SMALL-SIGNAL CURRENT GAINS SMALL-SIGNAL EQUIVALENT CIRCUITS SECONDARY EFFECTS IN BJTS BASE-WIDTH MODULATION HYBRID-P EQUIVALENT CIRCUIT VARIATION OF IC WITH VBE H-PARAMETER EQUIVALENT CIRCUIT PUNCHTHROUGH BJT CAPACITANCES BJT LARGE-SIGNAL MODELS EBERS–MOLL MODEL SATURATION MODE THE BJT AS A SWITCH REGENERATIVE PAIR AUGMENTED MODELS HETEROJUNCTION BIPOLAR TRANSISTOR NOISE IN SEMICONDUCTORS COMPARISON OF BJTS AND FETS SUMMARY OF MAIN CONCEPTS 7 TWO-PORT CIRCUITS, AMPLI?ERS, AND FEEDBACK TWO-PORT CIRCUITS INTERPRETATION OF PARAMETERS EQUIVALENT CIRCUITS IDEAL AMPLI?ERS NEGATIVE FEEDBACK SERIES–SHUNT FEEDBACK SIGNAL-FLOW DIAGRAMS SERIES–SERIES FEEDBACK SHUNT–SERIES FEEDBACK SHUNT–SHUNT FEEDBACK IDEAL OPERATIONAL AMPLI?ER NONINVERTING CON?GURATION UNITY-GAIN AMPLI?ER INVERTING CON?GURATION INTEGRATOR DIFFERENTIATOR EXTRANEOUS SIGNALS GAIN-BANDWIDTH PRODUCT SUPPLEMENTARY TOPICS AND EXAMPLES ON WEBSITE 8 SINGLE-STAGE TRANSISTOR AMPLI?ERS TRANSISTOR BIASING BIASING OF DISCRETE TRANSISTORS CURRENT MIRROR BJT CURRENT MIRROR MOSFET CURRENT MIRROR BASIC AMPLI?ER CON?GURATIONS GENERAL CONSIDERATIONS COMMON-EMITTER AMPLI?ER COMMON-SOURCE AMPLI?ER COMMON-DRAIN AMPLI?ER COMMON-COLLECTOR AMPLI?ER COMMON-SOURCE AMPLI?ER WITH SOURCE RESISTOR COMMON-EMITTER AMPLI?ER WITH EMITTER RESISTOR COMMON-GATE AMPLI?ER COMMON-BASE AMPLI?ER HIGH-FREQUENCY RESPONSE MILLER’S THEOREM POLES AND ZEROS OF TRANSFER FUNCTION COMMON EMITTER=SOURCE AMPLI?ER COMMON COLLECTOR=DRAIN AMPLI?ER COMMON-EMITTER=SOURCE AMPLI?ER WITH FEEDBACK RESISTOR COMMON-BASE=GATE AMPLI?ER COMPOSITE TRANSISTOR CONNECTIONS DARLINGTON PAIR COMMON COLLECTOR-COMMON EMITTER CASCADE CASCODE AMPLI?ER MOSFET CASCODE BJT CASCODE BICMOS CASCODE CASCODE CURRENT SOURCES AND MIRRORS