PROPERTIES AND APPLICATIONS OF TRANSISTORS

By ISABELLA ANDERSON

CONTENTS CHAPTER OPERATING PRINCIPLES OF SILICON SENSORS ENERGY DEPOSITION IN SILICON ? PARTICLES SIGNAL FORMATION IN SILICON SENSOR: SHOCKLEY-RAMO’S THEOREM RADIATION DAMAGE IN SILICON SENSORS IMPACT OF DEFECTS ON THE PROPERTIES OF SILICON SENSORS ACCEPTOR REMOVAL CHAPTER ULTRA-FAST SILICON DETECTORS LOW-GAIN AVALANCHE DIODE TECHNOLOGY CHARGE MULTIPLICATION OPTIMIZATION OF THE LGAD DESIGN FOR TIMING APPLICATION: THE ULTRA-FAST SILICON DETECTOR PROJECT THE WEIGHT?ELD2 SIMULATION PROGRAM UFSD SIGNAL FORMATION UFSD NOISE SOURCES TIME-TAGGING DETECTOR JITTER IONIZATION SIGNAL DISTORTION TDC UFSD READ-OUT ELECTRONIC TIME WALK CORRECTION UFSD TEMPORAL RESOLUTION BUILDING BLOCKS OF MULTI-PADS UFSD RADIATION EFFECTS ON UFSD INCREASED LEAKAGE CURRENT: POWER CONSUMPTION AND SHOT NOISE VARIATION IN DOPING CONCENTRATION: LOSS OF GAIN AND HIGHER DEPLETION VOLTAGE CHARGE TRAPPING ON THE UFSD SIGNAL SHAPE 2 10 GAIN RECOVERY IN IRRADIATED UFSD 2 11 ADDITIONAL LGAD DESIGNS 2 11 1 DOUBLE-SIDED LGAD DESIGN 2 11 2 N-IN-P VS P-IN-N LGAD DESIGN NUMERICAL MODELLING AND SIMULATION INTRODUCTION PHYSICAL MODELLING OF SEMICONDUCTOR DEVICES ELECTROMAGNETIC MODEL: THE POISSON’S EQUATION TRANSPORT MODELS NUMERICAL TREATMENT OF MODELS METHODS OF SPATIAL DISCRETIZATION THE ITERATIVE SOLUTION OF THE EQUATIONS UFSD IMPLEMENTATION AND MODELLING GENERATION-RECOMBINATION MECHANISMS RADIATION DAMAGE MODELLING OTHER PHYSICAL MODELS SIMULATING ULTRA-FAST SILICON DETECTORS STATIC CHARACTERISTICS AND ELECTRIC ?ELD TRANSIENT PROCESSES RESISTIVE AC-COUPLED SILICON DETECTORS DESIGN EXPERIMENTAL TECHNIQUES STATIC CHARACTERIZATION OF UFSD SENSORS CURRENT-VOLTAGE MEASUREMENT CAPACITANCE-VOLTAGE MEASUREMENT MULTI-PAD SENSORS TEST CCD-CAMERA SETUP TRANSIENT CURRENT TECHNIQUE SYSTEM THE ?-SOURCE SETUP UFSDS READ-OUT ELECTRONIC BOARDS CHARACTERIZATION OF UFSDS GAIN LAYER CHARACTERIZATION GAIN LAYER DESIGN IMPACT OF THE GAIN LAYER DESIGN ON PERFORMANCES CARBONATED GAIN IMPLANT THE EFFECTS OF TEMPERATURE ON THE GAIN LAYER PERFORMANCES THE INTER-PAD REGION TRENCH-ISOLATED LGADS MEASUREMENT OF THE NO-GAIN DISTANCE EFFECTS OF THE P-STOP IMPLANT DESIGN ON UFSD PERFORMANCES RESISTIVE AC-COUPLED SILICON DETECTORS (RSD) SUMMARY OF INTER-PAD DESIGNS TEMPORAL RESOLUTION YIELD AND UNIFORMITY OF A LARGE UFSD PRODUCTION YIELD AND LEAKAGE CURRENT UNIFORMITY GAIN UNIFORMITY CHARACTERIZATION OF IRRADIATED UFSDS IRRADIATION CAMPAIGNS AND HANDLING OF IRRADIATED SENSORS STUDY OF THE ACCEPTOR REMOVAL MECHANISM DETERMINATION OF VGL IN IRRADIATED UFSDS ACCEPTOR REMOVAL DUE TO NEUTRONS OR PROTONS IRRADIATION GAIN IN THE SENSOR BULK GAIN, NOISE, AND TEMPORAL RESOLUTION OF IRRADIATED UFSD SENSORS WF2 GAIN SIMULATION OF IRRADIATED UFSDS UFSDS NOISE UFSDS NON-UNIFORM IRRADIATION SENSORS FOR EXTREME FLUENCES THE REGIME OF EXTREME ?UENCES SENSOR DESIGN SUBSTRATE CHOICE THE GAIN LAYER REGION THE SENSORS PERIPHERY SIMULATION OF EXTREMELY IRRADIATED SENSORS