THE PRINCIPLES OF CHEMISTRY

By PAUL DAVIS

CONTENTS GAS-PHASE THERMOCHEMISTRY AND MECHANISM OF ORGANOMETALLIC TIN OXIDE CVD PRECURSORS MATERIALS CHEMISTRY OF GROUP 13 NITRIDES SINGLE-SOURCE-PRECURSOR CVD: ALKOXY AND SILOXY ALUMINUM HYDRIDES CVD DEPOSITION OF BINARY ALSB AND GASB MATERIAL FILMS – A SINGLE-SOURCE APPROACH ORGANOMETALLIC PRECURSORS FOR ATOMIC LAYER DEPOSITION SURFACE REACTIVITY OF TRANSITION METAL CVD PRECURSORS: TOWARDS THE CONTROL OF THE NUCLEATION STEP ORGANOMETALLIC AND METALLO-ORGANIC PRECURSORS FOR NANOPARTICLES GAS-PHASE THERMOCHEMISTRY AND MECHANISM OF ORGANOMETALLIC TIN OXIDE CVD PRECURSORS INTRODUCTION THERMOCHEMISTRY AND KINETICS OF ORGANOMETALLIC TIN COMPOUNDS IN THE LITERATURE PREVIOUS INVESTIGATIONS OF MOCVD CHEMISTRY SN(CH3)4 + O2 (CH3)2SNCL2 + O2 (CH3)2SNCL2 + H2O/O2 C4H9SNCL3 + H2O/O2 AB INITIO PREDICTIONS OF TIN THERMOCHEMISTRY QUANTUM CHEMISTRY METHODS FOR THE PREDICTION OF MOLECULAR THERMOCHEMISTRY INTRODUCTION TO THE BAC-MP4 METHOD COUPLED CLUSTER METHOD FOR UNSATURATED OXYGEN-CONTAINING COMPOUNDS HEATS OF FORMATION FOR TIN-CONTAINING COMPOUNDS BOND DISSOCIATION ENERGIES IN TIN COMPOUNDS COMPLEXES WITH WATER GAS-PHASE REACTION PATHWAYS: EQUILIBRIUM CALCULATIONS AND MECHANISM ANALYSIS SNCL4 SNCL2(CH3)2 5 2 1 EQUILIBRIUM PREDICTIONS 5 2 2 REACTION PATH ANALYSIS SNCL3(C4H9) 5 3 1 EQUILIBRIUM PREDICTIONS 5 3 2 REACTION PATH ANALYSIS, MBTC CONCLUSIONS REFERENCES ABSTRACT ORGANOMETALLIC COMPOUNDS ARE COMMONLY USED PRECURSORS FOR THE FORMATION OF TIN OXIDE ?LMS BY CHEMICAL VAPOR DEPOSITION (CVD) METHODS THE HIGH TEMPERATURES (600–700 ?C) USED IN CVD LEAD TO CHEMICAL REACTIONS IN THE GAS PHASE THAT IN SOME CASES